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Controlled synthesis of copper-silicide nanostructures.

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Controlled synthesis of copper-silicide nanostructures.

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dc.contributor.author Li, Shaozhou.
dc.contributor.author Cai, Hui.
dc.contributor.author Gan, Chee Lip.
dc.contributor.author Guo, Jun.
dc.contributor.author Dong, Zhili.
dc.contributor.author Ma, Jan.
dc.date.accessioned 2011-12-16T03:43:28Z
dc.date.available 2011-12-16T03:43:28Z
dc.date.copyright 2010
dc.date.issued 2011-12-16
dc.identifier.citation Li, S., Cai, H., Gan, C. L., Guo, J., Dong, Z., Ma, J. (2010). Controlled Synthesis of Copper-Silicide Nanostructures. Crystal Growth and Design, 10 (7), 2983–2989.
dc.identifier.uri http://hdl.handle.net/10220/7413
dc.description.abstract Octahedral-shaped, spindle-shaped, and wire-shaped Cu3Si nanostructures were synthesized through a silicon void-filling process. Faceted silicon voids were observed to spontaneously grow at the SiO2/Si interface through the catalytic effect of Cu3Si, and their shapes were modified by the stresses at the Si/Cu3Si interfaces. By controlling the relative amount of stress relief, it is possible to form differently shaped silicon voids. This work shows that different patterned nanostuctures of other materials may also be created through this growth mechanism.
dc.language.iso en
dc.relation.ispartofseries Crystal growth and design
dc.rights © 2010 American Chemical Society
dc.subject DRNTU::Engineering::Materials::Nanostructured materials.
dc.title Controlled synthesis of copper-silicide nanostructures.
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1021/cg1000232

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