Illumination-enhanced hysteresis of transistors based on carbon nanotube networks

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Illumination-enhanced hysteresis of transistors based on carbon nanotube networks

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dc.contributor.author Lee, Chun Wei
dc.contributor.author Dong, Xiaochen
dc.contributor.author Goh, Seok Hong
dc.contributor.author Wang, Junling
dc.contributor.author Wei, Jun
dc.contributor.author Li, Lain-Jong
dc.date.accessioned 2011-12-16T08:16:35Z
dc.date.available 2011-12-16T08:16:35Z
dc.date.copyright 2009
dc.date.issued 2011-12-16
dc.identifier.citation Lee, C. W., Dong, X., Goh, S. H., Wang, J., Wei, J., & Li, L. J. (2009). Illumination-Enhanced Hysteresis of Transistors Based on Carbon Nanotube Networks. Journal of physical chemistry C, 113 (12), 4745-4747.
dc.identifier.uri http://hdl.handle.net/10220/7420
dc.description.abstract The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO2 on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si−SiO2 interface. We show that the hysteresis in SWNT transistors with a nearly trap-free Si backgate is thermally activated (activation energy Ea 129−184 meV) in a dark ambient condition, and it is attributed to hole trappings at the SiO2 surfaces proximate to SWNTs. Photon-illumination on the SWNT transistor devices with thin SiO2 dielectrics (80 nm) results in the ON-current increase due to the effective gating from the photovoltage generated at the Si−SiO2 interface. The light-induced simultaneous enhancement of ON-current and hysteresis suggests that the illumination-enhanced hysteresis is due to the photovoltage-activated hole trapping process on SiO2 surfaces.
dc.language.iso en
dc.relation.ispartofseries Journal of physical chemistry C
dc.rights © 2009 American Chemical Society.
dc.subject DRNTU::Engineering::Materials::Nanostructured materials
dc.title Illumination-enhanced hysteresis of transistors based on carbon nanotube networks
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1021/jp811006r
dc.description.version Accepted version

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