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Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles.

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Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles.

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Title: Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles.
Author: Lee, Chun Wei.; Weng, Cheng-Hui.; Wei, Li.; Chen, Yuan.; Chan-Park, Mary B.; Tsai, Chuen-Horng.; Leou, Keh-Chyang.; Poa, Patrick C. H.; Wang, Junling.; Li, Lain-Jong.
Copyright year: 2008
Abstract: Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60−65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic−aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by 1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield.
Subject: DRNTU::Engineering::Materials::Nanostructured materials.
Type: Journal Article
Series/ Journal Title: Journal of physical chemistry C
School: School of Materials Science and Engineering
Rights: © 2008 American Chemical Society.
Version: Accepted version

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