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Atomic stacking configurations in atomic layer deposited TiN films

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Atomic stacking configurations in atomic layer deposited TiN films

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dc.contributor.author Li, Sean
dc.contributor.author Dong, Zhili
dc.contributor.author Lim, B. K.
dc.contributor.author Liang, M. H.
dc.contributor.author Sun, C. Q.
dc.contributor.author Gao, W.
dc.contributor.author Park, H. S.
dc.date.accessioned 2012-01-06T01:12:04Z
dc.date.available 2012-01-06T01:12:04Z
dc.date.copyright 2002
dc.date.issued 2012-01-06
dc.identifier.citation Li, S., Dong, Z. L., Lim, B. K., Liang, M. H., Sun, C. Q., Gao, W., & Park, H. S. (2002). Atomic Stacking Configurations in Atomic Layer Deposited TiN Films, The Journal of Physical Chemistry B, 106(49), 12797-12800.
dc.identifier.uri http://hdl.handle.net/10220/7437
dc.description.abstract Study on the atomic stacking configurations and grain boundary structures of ultrathin nanocrystalline TiN films deposited by the atomic layer deposition technique reveals that the dangling bonds and surface reconstruction may be the intrinsic factors that result in the crystal growth with different configurations. The surface topography of the amorphous SiO2 layer is an extrinsic factor to affect the atomic stacking configurations in ultrathin nanocrystalline TiN films. The analysis indicates that the coherent boundary should be the favored boundary in the connection of the tilt grains. These atomic stacking and grain boundary configurations may be the main factors to produce the pinhole-free, high-density, and homogeneous ultrathin nanocrystalline TiN film prepared by the atomic layer deposition method. This study may provide new insight into the fundamental mechanism and properties of ultrathin TiN films.
dc.language.iso en
dc.relation.ispartofseries The journal of physical chemistry B
dc.rights © 2002 American Chemical Society.
dc.subject DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
dc.title Atomic stacking configurations in atomic layer deposited TiN films
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1021/jp026814e

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