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Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design.

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Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design.

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dc.contributor.author Vaddi, Ramesh.
dc.contributor.author Agarwal, Rajendra P.
dc.contributor.author Dasgupta, Sudeb.
dc.contributor.author Kim, Tony Tae-Hyoung.
dc.date.accessioned 2012-02-02T05:15:27Z
dc.date.available 2012-02-02T05:15:27Z
dc.date.copyright 2011
dc.date.issued 2012-02-02
dc.identifier.citation Vaddi, R., Agarwal, R. P., Dasgupta, S., & Kim, T. T. (2011). Design and Analysis of Double-Gate MOSFETs for Ultra-Low Power Radio Frequency Identification (RFID): Device and Circuit Co-Design. Journal of Low Power Electronics and Applications, 1(2), 277-302.
dc.identifier.issn 2079-9268(electronic)
dc.identifier.uri http://hdl.handle.net/10220/7491
dc.description.abstract Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more otpimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. However, DGMOSFETs for subthreshold circuit design have not been much explored in comparison to those for string inversion-based design. In this paper, various configurations of DGMOSFETs, such as tied/independent gates and symmetric/asymmetric gate oxide thicknes are explored for ultra-low power and high efficient radio frequency identification (RFID) design. Comparison of bulk CMOS with DGMOSFETs has been conducted in ultra-low power subthreshold digital logic design and rectifier desgin, emphasizing the scope of the nano-scale DGMOSFET technology for future ultra-low power systems. The DGMOSFET-based subthreshold logic improves energy efficiency by more than 40% compared to the bulk CMOS-based logic at 32nm. Among the various DGMOSFET configurations for RFID rectifiers, symmetric tied-gate DGMOSFET has the best power conversion efficiency and the lowest power consumption.
dc.format.extent 26 p.
dc.language.iso en
dc.relation.ispartofseries Journal of low power electronics and applications
dc.rights © 2011 by the authors; licensee MDPI, Basel, Switzerland.
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits.
dc.title Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design.
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.3390/jlpea1020277
dc.description.version Published version
dc.identifier.rims 163062

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