Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/94435
Title: Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure
Authors: Dong, Xiaochen
Peng, Wang
Fang, Wenjing
Su, Ching-Yuan
Chen, Yu-Hsin
Li, Lain-Jong
Huang, Wei
Chen, Peng
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2011
Source: Dong, X., Wang, P., Fang, W., Su, C. Y., Chen, Y. H., Li, L. J., et al. (2011). Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure. Carbon, 49(11), 3672-3678.
Series/Report no.: Carbon
Abstract: Large-sized thin-films composed of single- and few-layered graphene have been synthesized by chemical vapor deposition (CVD) on copper foils under atmospheric pressure using ethanol or pentane as the precursor. Confocal Raman measurements, transmission electron microscopy and scanning tunneling microscopy show that the majority part of the obtained films exhibit hexagonal graphene lattice. Optical microscopy and electrical measurements confirm the continuity of these films. It is also found that the CVD-grown graphene films with ethanol as the precursor exhibit lower defect density, higher electrical conductivity, and higher hall mobility than those grown with pentane as the precursor. This liquid-precursor-based atmospheric pressure CVD synthesis provides a new route for simple, inexpensive and safe growth of graphene thin-films.
URI: https://hdl.handle.net/10356/94435
http://hdl.handle.net/10220/7501
DOI: 10.1016/j.carbon.2011.04.069
Schools: School of Chemical and Biomedical Engineering 
Organisations: Key Laboratory for Organic Electronics & Information Displays (KLOEID), Institute of Advanced Materials (IAM)
Research Center for Applied Sciences, Academia Sinica, Taipei
Rights: © 2011 Elsevier.  This is the author created version of a work that has been peer reviewed and accepted for publication by Carbon, Elsevier.  It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document.  The published version is available at: [DOI: http://dx.doi.org/10.1016/j.carbon.2011.04.069]
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SCBE Journal Articles

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