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Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure.

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Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure.

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Title: Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure.
Author: Dong, Xiaochen.; Peng, Wang.; Fang, Wenjing.; Su, Ching-Yuan.; Chen, Yu-Hsin.; Li, Lain-Jong.; Huang, Wei.; Chen, Peng.
Copyright year: 2011
Abstract: Large-sized thin-films composed of single- and few-layered graphene have been synthesized by chemical vapor deposition (CVD) on copper foils under atmospheric pressure using ethanol or pentane as the precursor. Confocal Raman measurements, transmission electron microscopy and scanning tunneling microscopy show that the majority part of the obtained films exhibit hexagonal graphene lattice. Optical microscopy and electrical measurements confirm the continuity of these films. It is also found that the CVD-grown graphene films with ethanol as the precursor exhibit lower defect density, higher electrical conductivity, and higher hall mobility than those grown with pentane as the precursor. This liquid-precursor-based atmospheric pressure CVD synthesis provides a new route for simple, inexpensive and safe growth of graphene thin-films.
Subject: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films.
Type: Journal Article
Series/ Journal Title: Carbon
School: School of Chemical and Biomedical Engineering
Related Organization: Key Laboratory for Organic Electronics & Information Displays (KLOEID), Institute of Advanced Materials (IAM)Research Center for Applied Sciences, Academia Sinica, Taipei
Rights: © 2011 Elsevier.  This is the author created version of a work that has been peer reviewed and accepted for publication by Carbon, Elsevier.  It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document.  The published version is available at: [DOI: http://dx.doi.org/10.1016/j.carbon.2011.04.069 ]
Version: Accepted version

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