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Tailoring the charge carrier dynamics in ZnO nanowires : the role of surface hole/electron traps.

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Tailoring the charge carrier dynamics in ZnO nanowires : the role of surface hole/electron traps.

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dc.contributor.author Li, Mingjie.
dc.contributor.author Xing, Guichuan.
dc.contributor.author Qune, Lloyd Foong Nien Ah.
dc.contributor.author Xing, Guozhong.
dc.contributor.author Wu, Tom.
dc.contributor.author Huan, Alfred Cheng Hon.
dc.contributor.author Zhang, Xinhai.
dc.contributor.author Sum, Tze Chien.
dc.date.accessioned 2012-02-21T01:18:06Z
dc.date.available 2012-02-21T01:18:06Z
dc.date.copyright 2012
dc.date.issued 2012-02-21
dc.identifier.citation Li, M., Xing, G., Qune, L. F. N. A., Xing, G., Wu, T., Huan, A. C. H., & et al. (2012). Tailoring the charge carrier dynamics in ZnO nanowires: the role of surface hole/electron traps. Physical Chemistry Chemical Physics, 14, 3075-3082.
dc.identifier.uri http://hdl.handle.net/10220/7528
dc.description.abstract Post-fabrication thermal-annealed ZnO nanowires (NWs) in an oxidizing (or a reducing) ambient were investigated using transient photoluminescence and X-ray photoelectron spectroscopy. Our findings reveal an ultrafast hole-transfer process to the surface adsorbed oxygen species (e.g. O2-, ) occurring within a few hundred picoseconds (ps) in the air-annealed samples; and an ultrafast electron-transfer process to charged oxygen vacancies (i.e. Vo2+, ) occurring within tens of ps in the H2-annealed samples. Contrary to the common perception that the bandedge emission (BE) dynamics are strongly influenced by the carrier trapping to the green emission related defect states (i.e., VZn), these above processes compete effectively with the ZnO BE. Hole trapping by ionized VZn, which occurs in an ultrashort sub-ps-to-ps timescale (and hence limits its effective hole capture radius), however, has less influence on the BE dynamics. Importantly, our findings shed new light on the photoinduced charge transfer processes that underpins the novel properties of enhanced photocatalytic activity, photovoltaic performance, and photoconductivity response of ZnO NWs; thereby suggesting a strategy for tailoring the ultrafast carrier dynamics in ZnO NW-based devices.
dc.format.extent 8 p.
dc.language.iso en
dc.relation.ispartofseries Physical chemistry chemical physics
dc.rights © 2012 The Royal Society of Chemistry.  This is the author created version of a work that has been peer reviewed and accepted for publication by Physical Chemistry Chemical Physics, The Royal Society of Chemistry.  It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document.  The published version is available at: [DOI: http://dx.doi.org/10.1039/c2cp23425d]
dc.subject DRNTU::Science::Chemistry::Physical chemistry.
dc.title Tailoring the charge carrier dynamics in ZnO nanowires : the role of surface hole/electron traps.
dc.type Journal Article
dc.contributor.school School of Physical and Mathematical Sciences
dc.identifier.doi http://dx.doi.org/10.1039/c2cp23425d
dc.description.version Accepted version

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