mirage

Formation of Ti-Si-N film using low frequency, high density inductively coupled plasma process.

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Formation of Ti-Si-N film using low frequency, high density inductively coupled plasma process.

Show simple item record

dc.contributor.author Ee, Elden Yong Chiang.
dc.contributor.author Chen, Z.
dc.contributor.author Chan, L.
dc.contributor.author See, K. H.
dc.contributor.author Law, S. B.
dc.contributor.author Xu, S.
dc.contributor.author Tsakadze, Z. L.
dc.contributor.author Rutkevych, P. P.
dc.contributor.author Zeng, K. Y.
dc.contributor.author Shen, L.
dc.date.accessioned 2012-04-09T04:09:09Z
dc.date.available 2012-04-09T04:09:09Z
dc.date.copyright 2005
dc.date.issued 2012-04-09
dc.identifier.citation Ee, E. Y. C., Chen, Z., Chan, L., See, K. H., Law, S. B., Xu, S., et al. (2005). Formation of Ti-Si-N film using low frequency, high density inductively coupled plasma process. Journal of vacuum science & technology B, 23, 2444-2448.
dc.identifier.uri http://hdl.handle.net/10220/7695
dc.description.abstract Titanium silicon nitride (Ti–Si–N) has emerged as a strong candidate for next generation diffusion barrier material in copper/low-k dielectric back-end-of-line device fabrication. Low frequency, high density inductively coupled plasma process has been developed for the growth of Ti–Si–N film. This work employs the reaction between TixSiy and the nitrogen plasma. Ti–Si–N films have been successfully grown over different process conditions. Film properties were characterized by Rutherford backscattering spectrometry (RBS), x-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectroscopy, x-ray diffraction (XRD), and four-point resistivity probe. RBS reveals that 2–67 at. % of nitrogen can be achieved through the implantation of nitrogen in TixSiy film. XPS and XRD results show that TiN and Si3N4 are successfully formed. As the external bias increases from 100 to 300 V, there is an 80% increase in sheet resistance. Other process conditions investigated do not show a significant effect on film sheet resistance. Increasing argon plasma activation time can significantly increase the implantation depth of nitrogen into TixSiy substrate.
dc.format.extent 5 p.
dc.language.iso en
dc.relation.ispartofseries Journal of vacuum science & technology B
dc.rights © 2005 American Vacuum Society This paper was published in Journal of Vacuum Science & Technology B and is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at the following official URL: http://dx.doi.org/10.1116/1.2131080. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Materials.
dc.title Formation of Ti-Si-N film using low frequency, high density inductively coupled plasma process.
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1116/1.2131080
dc.description.version Published version

Files in this item

Files Size Format View
54. Formation o ... coupled plasma process.pdf 105.3Kb PDF View/Open

This item appears in the following Collection(s)

Show simple item record

Statistics

Total views

All Items Views
Formation of Ti-Si-N film using low frequency, high density inductively coupled plasma process. 160

Total downloads

All Bitstreams Views
54. Formation of Ti-Si-N film using low frequency, high density inductively coupled plasma process.pdf 71

Top country downloads

Country Code Views
United States of America 32
Singapore 14
China 8
Russian Federation 3
Hong Kong 2

Top city downloads

city Views
Mountain View 26
Singapore 13
Beijing 2
Johannesburg 1
Perth 1