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Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects.

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Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects.

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dc.contributor.author Gan, Zhenghao.
dc.contributor.author Shao, W.
dc.contributor.author Mhaisalkar, Subodh Gautam.
dc.contributor.author Chen, Z.
dc.contributor.author Li, Hong Yu.
dc.contributor.author Tu, K. N.
dc.contributor.author Gusak, A. M.
dc.date.accessioned 2012-04-09T07:49:11Z
dc.date.available 2012-04-09T07:49:11Z
dc.date.copyright 2006
dc.date.issued 2012-04-09
dc.identifier.citation Gan, Z., Shao, W., Mhaisalkar, S. G., Chen, Z., Li, H., Tu, K. N., et. al. (2006). Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects. Journal of materials research, 21(9), 2241-2245.
dc.identifier.uri http://hdl.handle.net/10220/7699
dc.description.abstract Electromigration (EM) in copper dual-damascene interconnects with extensions(also described as overhang regions or reservoirs) in the upper metal (M2) were investigated. It was found that as the extension length increases from 0 to 60 nm, the median-time-to-failure increased from 50 to 140 h, representing a ∼200% improvement in lifetimes. However, further increment of the extension length from 60 to 120 nm did not result in any significant improvement in EM lifetimes. Based on calculations of current densities in the reservoir regions and recently reported nucleation, void movement, and agglomeration-based EM phenomena, it is proposed that there is a critical extension length beyond which increasing extension lengths will not lead to longer EM lifetimes.
dc.format.extent 5 p.
dc.language.iso en
dc.relation.ispartofseries Journal of materials research
dc.rights © 2006 Materials Research Society. This paper was published in Journal of Materials Research and is made available as an electronic reprint (preprint) with permission of Materials Research Society. The paper can be found at the following DOI: [http://dx.doi.org/10.1557/JMR.2006.0270].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Materials.
dc.title Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects.
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1557/JMR.2006.0270
dc.description.version Published version

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