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Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed Si1-xGex/Si substrates

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Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed Si1-xGex/Si substrates

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Title: Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed Si1-xGex/Si substrates
Author: Setiawan, Y.; Lee, Pooi See; Balakumar, S.; Pey, Kin Leong; Wang, X. C.
Copyright year: 2008
Abstract: Laser-induced melt-mediated Ni-based germanosilicide has been formed on condensed SiGe substrates (with 40% Ge). Pure Ni germanosilicide formation was plagued by the presence of amorphous oxygen-rich globules. Platinum alloying has greatly improved the morphology of the laser-induced Ni(Pt) germanosilicide with the alleviation of oxygen incorporation during laser annealing. This results in an improvement in the surface roughness and electrical conductivity of the germanosilicide film. Low affinity of Pt toward oxygen is believed to have resulted in this improvement.
Subject: DRNTU::Engineering::Materials.
Type: Journal Article
Series/ Journal Title: Electrochemical and solid-state letters
School: School of Materials Science and Engineering
Rights: © 2008 The Electrochemical Society. This paper was published in Electrochemical and Solid-State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: http://dx.doi.org/10.1149/1.2953682. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Version: Published version

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