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Title:
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Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing.
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Author:
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Tan, Eu Jin.; Pey, Kin Leong.; Chi, Dong Zhi.; Lee, Pooi See.; Setiawan, Y.; Hoe, K. M.
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Copyright year:
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2007 |
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Abstract:
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We studied erbium germanosilicide films formed on relaxed p-type Si1−xGex(100) (x = 0–0.3) virtual substrates by conventional rapid thermal annealing (RTA) at temperatures of 500–700°C. Two dimensional X-ray diffraction and pole figure measurements revealed that the silicide films formed were epitaxial Er(Si1−xGex)2−y with orientation relationship Er(Si1−xGex)2−y(1100)- [0001]||Si1−xGex(001)[110] or Er(Si1−xGex)2−y(1100)[0001]||Si1−xGex(001)[110]. Schottky barrier height, Φ(Bp), of the Er(Si1−xGex)2−y/p − Si1−xGex(100) contact was found to decrease from 0.79 to 0.62 eV with increasing Ge (from 0 to 30%), implying a slight increase in its barrier height for electrons, Φ(Bneff), from 0.33 to 0.37 eV |
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Subject:
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DRNTU::Engineering::Materials. |
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Type:
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Journal Article |
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Series/ Journal Title:
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Journal of the electrochemical society |
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School:
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School of Materials Science and Engineering |
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Rights:
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© 2007 The Electrochemical Society. This paper was published in Journal of the Electrochemical Society and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: http://dx.doi.org/10.1149/1.2800761. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. |
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Version:
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Published version |
