mirage

Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing.

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing.

Show simple item record

dc.contributor.author Tan, Eu Jin.
dc.contributor.author Pey, Kin Leong.
dc.contributor.author Chi, Dong Zhi.
dc.contributor.author Lee, Pooi See.
dc.contributor.author Setiawan, Y.
dc.contributor.author Hoe, Keat Mun.
dc.date.accessioned 2012-05-16T03:57:56Z
dc.date.available 2012-05-16T03:57:56Z
dc.date.copyright 2007
dc.date.issued 2012-05-16
dc.identifier.citation Tan, E. J., Pey, K. L., Chi, D. Z., Lee, P. S., Setiawan, Y., & Hoe, K. M. (2008). Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing. Journal of the Electrochemical Society, 155(1).
dc.identifier.uri http://hdl.handle.net/10220/8006
dc.description.abstract We studied erbium germanosilicide films formed on relaxed p-type Si1−xGex(100) (x = 0–0.3) virtual substrates by conventional rapid thermal annealing (RTA) at temperatures of 500–700°C. Two dimensional X-ray diffraction and pole figure measurements revealed that the silicide films formed were epitaxial Er(Si1−xGex)2−y with orientation relationship Er(Si1−xGex)2−y(1100)- [0001]||Si1−xGex(001)[110] or Er(Si1−xGex)2−y(1100)[0001]||Si1−xGex(001)[110]. Schottky barrier height, Φ(Bp), of the Er(Si1−xGex)2−y/p − Si1−xGex(100) contact was found to decrease from 0.79 to 0.62 eV with increasing Ge (from 0 to 30%), implying a slight increase in its barrier height for electrons, Φ(Bneff), from 0.33 to 0.37 eV
dc.format.extent 5 p.
dc.language.iso en
dc.relation.ispartofseries Journal of the electrochemical society
dc.rights © 2007 The Electrochemical Society. This paper was published in Journal of the Electrochemical Society and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: http://dx.doi.org/10.1149/1.2800761. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Materials.
dc.title Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing.
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1149/1.2800761
dc.description.version Published version

Files in this item

Files Size Format View
52. Materials a ... r(Si1-xGex)(2-y) films.pdf 863.8Kb PDF View/Open

This item appears in the following Collection(s)

Show simple item record

Statistics

Total views

All Items Views
Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing. 127

Total downloads

All Bitstreams Views
52. Materials and electrical characterization of Er(Si1-xGex)(2-y) films.pdf 77

Top country downloads

Country Code Views
United States of America 25
China 13
Taiwan 9
Singapore 7
Unknown Country 3

Top city downloads

city Views
Mountain View 20
Taipei 8
Singapore 7
Seoul 2
Southfield 2

Downloads / month

  2014-02 2014-03 2014-04 total
52. Materials and electrical characterization of Er(Si1-xGex)(2-y) films.pdf 0 0 4 4