Nickel silicide formation using multiple-pulsed laser annealing

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Nickel silicide formation using multiple-pulsed laser annealing

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Title: Nickel silicide formation using multiple-pulsed laser annealing
Author: Setiawan, Y.; Lee, Pooi See; Pey, Kin Leong; Wang, X. C.; Lim, G. C.; Chow, F. L.
Copyright year: 2007
Abstract: The effect of multiple-pulsed laser irradiation on Ni silicide formation in Ni(Ti) /Si system was studied. A layered structure consisting of both crystalline NiSi2 and Ni-rich Ni–Si amorphous phases with a protective TiOx overlayer was formed after five-pulsed laser annealing at 0.4 J cm−2. Different solidification velocities caused by a variation in the atomic concentration across the melt have led to the formation of this layered structure. On the other hand, by increasing the number of laser pulses, a continuous layer of polycrystalline NiSi was obtained after a 20-pulsed laser annealing at 0.3 J cm−2 laser fluence. Its formation is attributed to a better elemental mixing which occurred during subsequent pulses. Enhancement of surface absorption and remelting of the phases formed is proposed as the mechanism governing the continuous NiSi layer formation.
Subject: DRNTU::Engineering::Materials.
Type: Journal Article
Series/ Journal Title: Journal of applied physics
School: School of Materials Science and Engineering
Rights: © 2007 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2433707. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Version: Published version

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