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Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

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Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

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Title: Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
Author: Yuan, C. L.; Darmawan, P.; Setiawan, Y.; Lee, Pooi See; Ma, Jan
Copyright year: 2006
Abstract: We have developed a method based upon pulsed laser deposition to produce SrTiO3 nanocrystals embedded in amorphous Lu2O3 high-k dielectric. The high resolution transmission electron microscopy study revealed the complete isolation of SrTiO3 nanocrystals embedded in Lu2O3 matrix with 4 nm diameter and well distributed with an area density estimated to be about 8x 10^11 cm−2. A pronounced capacitance-voltage hysteresis is observed with a memory window of ~1.5 V under the 6 V programming. In addition, the retention characteristics are tested to be robust.
Subject: DRNTU::Engineering::Materials.
Type: Journal Article
Series/ Journal Title: Applied physics letters
School: School of Materials Science and Engineering
Rights: © 2006 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2234302. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Version: Published version

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