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Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application.

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Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application.

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dc.contributor.author Yuan, C. L.
dc.contributor.author Darmawan, P.
dc.contributor.author Setiawan, Y.
dc.contributor.author Lee, Pooi See.
dc.contributor.author Ma, Jan.
dc.date.accessioned 2012-05-16T07:08:32Z
dc.date.available 2012-05-16T07:08:32Z
dc.date.copyright 2006
dc.date.issued 2012-05-16
dc.identifier.citation Yuan, C. L., Darmawan, P., Setiawan, Y., Lee, P. S., & Ma, J. (2006). Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application. Applied Physics Letters, 89(4).
dc.identifier.uri http://hdl.handle.net/10220/8013
dc.description.abstract We have developed a method based upon pulsed laser deposition to produce SrTiO3 nanocrystals embedded in amorphous Lu2O3 high-k dielectric. The high resolution transmission electron microscopy study revealed the complete isolation of SrTiO3 nanocrystals embedded in Lu2O3 matrix with 4 nm diameter and well distributed with an area density estimated to be about 8x 10^11 cm−2. A pronounced capacitance-voltage hysteresis is observed with a memory window of ~1.5 V under the 6 V programming. In addition, the retention characteristics are tested to be robust.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights © 2006 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2234302. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Materials.
dc.title Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application.
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2234302
dc.description.version Published version

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