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Pulsed laser induced silicidation on TiN-capped Co/Si bilayers.

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Pulsed laser induced silicidation on TiN-capped Co/Si bilayers.

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Title: Pulsed laser induced silicidation on TiN-capped Co/Si bilayers.
Author: Chow, F. L.; Lee, Pooi See.; Pey, Kin Leong.; Tang, L. J.; Tung, Chih Hang.; Wang, X. C.; Lim, G. C.
Copyright year: 2006
Abstract: This paper studies the effects of pulsed laser-induced annealing of TiN-capped Co/Si bilayers with and without preamorphized Si substrate. For a low fluence of 0.2 J /cm2, nonstoichiometry Co silicide with triple-layered structure is formed. On the other hand, highly textured CoSi2 grains in (111) direction are formed for a high fluence of 0.7 J /cm2. The highly textured CoSi2 layer is monocrystalline and fully coherent with the (111) plane of the Si substrate. However, it has a large amount of microstructural defects throughout the layer. Competitive growth mechanisms between crystallization of homogenous intermixed layer and the nucleation from the melt boundary are discussed.
Subject: DRNTU::Engineering::Materials.
Type: Journal Article
Series/ Journal Title: Journal of applied physics
School: School of Materials Science and Engineering
Rights: © 2006 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2171774. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Version: Published version

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