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Pulsed laser induced silicidation on TiN-capped Co/Si bilayers

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Pulsed laser induced silicidation on TiN-capped Co/Si bilayers

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dc.contributor.author Chow, F. L.
dc.contributor.author Lee, Pooi See
dc.contributor.author Pey, Kin Leong
dc.contributor.author Tang, L. J.
dc.contributor.author Tung, Chih Hang
dc.contributor.author Wang, X. C.
dc.contributor.author Lim, G. C.
dc.date.accessioned 2012-05-16T07:41:27Z
dc.date.available 2012-05-16T07:41:27Z
dc.date.copyright 2006
dc.date.issued 2012-05-16
dc.identifier.citation Chow, F. L., Lee, P. S., Pey, K. L., Tang, L. J., Tung, C. H., Wang, X. C., et al. (2006). Pulsed laser induced silicidation on TiN-capped Co/Si bilayers. Journal of Applied Physics, 99(4).
dc.identifier.uri http://hdl.handle.net/10220/8022
dc.description.abstract This paper studies the effects of pulsed laser-induced annealing of TiN-capped Co/Si bilayers with and without preamorphized Si substrate. For a low fluence of 0.2 J /cm2, nonstoichiometry Co silicide with triple-layered structure is formed. On the other hand, highly textured CoSi2 grains in (111) direction are formed for a high fluence of 0.7 J /cm2. The highly textured CoSi2 layer is monocrystalline and fully coherent with the (111) plane of the Si substrate. However, it has a large amount of microstructural defects throughout the layer. Competitive growth mechanisms between crystallization of homogenous intermixed layer and the nucleation from the melt boundary are discussed.
dc.format.extent 6 p.
dc.language.iso en
dc.relation.ispartofseries Journal of applied physics
dc.rights © 2006 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2171774. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Materials.
dc.title Pulsed laser induced silicidation on TiN-capped Co/Si bilayers
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2171774
dc.description.version Published version

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