mirage

Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

Show full item record

Title: Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing
Author: Zhao, H. B.; Pey, Kin Leong; Choi, W. K.; Chattopadhyay, Sujay; Fitzgerald, Eugene A.; Antoniadis, D. A.; Lee, Pooi See
Copyright year: 2002
Abstract: The interfacial reaction of Ni with relaxed Si1-xGex (x=0.2,0.3) films in the low temperature range, viz., 300–500 °C, has been investigated and compared with that of Ni with Si (i.e., x=0). Ni2(Si1-xGex) and Ni3(Si1-xGex)2 were observed at 300 °C whereas a uniform film of Ni(Si1-xGex) was formed at 400 °C for both Si0.8Ge0.2 and Si0.7Ge0.3 substrates. At 500 °C, a mixed layer consisting of Ni(Si1-yGey) and Si1-zGez was formed with a relation of z>x>y. Sheet resistance measurement results show that the silicided film attains its lowest value at an annealing temperature of 400 °C. The approximate values of the resistivity of the corresponding uniform Ni(Si1-xGex) (x=0.2, 0.3) derived from the transmission electron microscope and sheet resistance results are 19 and 23 μΩcm, respectively.
Subject: DRNTU::Engineering::Materials
Type: Journal Article
Series/ Journal Title: Journal of applied physics
School: School of Materials Science and Engineering
Rights: © 2002 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.1482423. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Version: Published version

Files in this item

Files Size Format View
99.Interfacial.pdf 169.1Kb PDF View/Open
   

DOI Query

- Get published version (via Digital Object Identifier)
   

This item appears in the following Collection(s)

Show full item record

Statistics

Total views

All Items Views
Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing 267

Total downloads

All Bitstreams Views
99.Interfacial.pdf 114
99. Interfacial reacions of Ni on Si1-xGex (x 5

Top country downloads

Country Code Views
United States of America 50
China 16
Singapore 14
India 5
Australia 3

Top city downloads

city Views
Mountain View 41
Singapore 14
Bangalore 2
Beijing 2
Cairo 2

Downloads / month

  2014-06 2014-07 2014-08 total
99.Interfacial.pdf 0 0 3 3