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Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

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Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

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dc.contributor.author Zhao, H. B.
dc.contributor.author Pey, Kin Leong
dc.contributor.author Choi, W. K.
dc.contributor.author Chattopadhyay, Sujay
dc.contributor.author Fitzgerald, Eugene A.
dc.contributor.author Antoniadis, D. A.
dc.contributor.author Lee, Pooi See
dc.date.accessioned 2012-05-16T08:05:36Z
dc.date.available 2012-05-16T08:05:36Z
dc.date.copyright 2002
dc.date.issued 2012-05-16
dc.identifier.citation Zhao, H. B., Pey, K. L., Choi, W. K., Chattopadhyay, S., Fitzgerald, E. A., Antoniadis, D. A., et al. (2002). Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing. Journal of Applied Physics, 92, 214-217.
dc.identifier.uri http://hdl.handle.net/10220/8031
dc.description.abstract The interfacial reaction of Ni with relaxed Si1-xGex (x=0.2,0.3) films in the low temperature range, viz., 300–500 °C, has been investigated and compared with that of Ni with Si (i.e., x=0). Ni2(Si1-xGex) and Ni3(Si1-xGex)2 were observed at 300 °C whereas a uniform film of Ni(Si1-xGex) was formed at 400 °C for both Si0.8Ge0.2 and Si0.7Ge0.3 substrates. At 500 °C, a mixed layer consisting of Ni(Si1-yGey) and Si1-zGez was formed with a relation of z>x>y. Sheet resistance measurement results show that the silicided film attains its lowest value at an annealing temperature of 400 °C. The approximate values of the resistivity of the corresponding uniform Ni(Si1-xGex) (x=0.2, 0.3) derived from the transmission electron microscope and sheet resistance results are 19 and 23 μΩcm, respectively.
dc.format.extent 4 p.
dc.language.iso en
dc.relation.ispartofseries Journal of applied physics
dc.rights © 2002 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.1482423. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Materials
dc.title Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.1482423
dc.description.version Published version

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