| dc.contributor.author |
Darmawan, P. |
| dc.contributor.author |
Chan, M. Y. |
| dc.contributor.author |
Zhang, T. |
| dc.contributor.author |
Setiawan, Y. |
| dc.contributor.author |
Seng, H. L. |
| dc.contributor.author |
Chan, T. K. |
| dc.contributor.author |
Osipowicz, T. |
| dc.contributor.author |
Lee, Pooi See. |
| dc.date.accessioned |
2012-05-16T08:20:46Z |
| dc.date.available |
2012-05-16T08:20:46Z |
| dc.date.copyright |
2008 |
| dc.date.issued |
2012-05-16 |
| dc.identifier.citation |
Darmawan, P., Chan, M. Y., Zhang, T., Setiawan, Y., Seng, H. L., Chan, T. K., et al. (2008). Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide semiconductor devices. Applied Physics Letters, 93(6). |
| dc.identifier.uri |
http://hdl.handle.net/10220/8038 |
| dc.description.abstract |
Effect of Ge out diffusion into Lu2O3 /Al2O3 high-k dielectric stack was investigated. Increasing Ge
signal intensity with increasing annealing temperature was observed, which suggests that there may be excessive Ge incorporation into the high-k film. The electrical measurement shows an
improvement of the k value with annealing temperature, as well as an increasing trend in the leakage
current density suggesting degradation in electrical performance due to Ge incorporation. Our work suggests that 8.8 at. % of Ge in the film is excessive and result in degradation of the electrical
performance of the device due to the increased leakage current. |
| dc.format.extent |
3 p. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
Applied physics letters |
| dc.rights |
© 2008 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2970036. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. |
| dc.subject |
DRNTU::Engineering::Materials. |
| dc.title |
Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices. |
| dc.type |
Journal Article |
| dc.contributor.school |
School of Materials Science and Engineering |
| dc.identifier.doi |
http://dx.doi.org/10.1063/1.2970036 |
| dc.description.version |
Published version |
