|
Title:
|
Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines.
|
|
Author:
|
Lee, Pooi See.; Pey, Kin Leong.; Mangelinck, D.; Ding, J.; Chi, Dong Zhi.; Dai, J. Y.; Chan, L.
|
|
Copyright year:
|
2002 |
|
Abstract:
|
The phase and morphology stability of NiSi and Ni(Pt)Si formed on the poly-Si lines and wide pads have been studied. Differences
in the NiSi2 nucleation temperature and the extent of layer inversion have been analyzed. The nucleation of NiSi2 was hindered on the narrow poly-Si lines as compared to that on the large area poly-Si pads at 750°C. Stress is believed to play an
important role in the delayed nucleation of NiSi2 . In addition, layer inversion was found to be less severe on the narrow poly-Si lines as compared to that on the poly-Si pads after being subjected to the same annealing condition. This is likely due to the
limiting grain growth of the poly-Si in the narrow lines. Enhanced stability of Ni(Pt)Si was achieved up to 800°C on both poly-Si wide pads and narrow lines. |
|
Subject:
|
DRNTU::Engineering::Materials. |
|
Type:
|
Journal Article |
|
Series/ Journal Title:
|
Journal of the electrochemical society |
|
School:
|
School of Materials Science and Engineering |
|
Rights:
|
© 2002 The Electrochemical Society. This paper was published in Journal of The Electrochemical Society and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: http://dx.doi.org/10.1149/1.1473192. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. |
|
Version:
|
Published version |
