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Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines.

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Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines.

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dc.contributor.author Lee, Pooi See.
dc.contributor.author Pey, Kin Leong.
dc.contributor.author Mangelinck, D.
dc.contributor.author Ding, Jun.
dc.contributor.author Chi, Dong Zhi.
dc.contributor.author Dai, J. Y.
dc.contributor.author Chan, L.
dc.date.accessioned 2012-05-17T01:14:31Z
dc.date.available 2012-05-17T01:14:31Z
dc.date.copyright 2002
dc.date.issued 2012-05-17
dc.identifier.citation Lee, P. S., Pey, K. L., Mangelick, D., Ding, J., Chi, D. Z., Dai, J. Y., et al. (2002). Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines. Journal of The Electrochemical Society, 149(6).
dc.identifier.uri http://hdl.handle.net/10220/8059
dc.description.abstract The phase and morphology stability of NiSi and Ni(Pt)Si formed on the poly-Si lines and wide pads have been studied. Differences in the NiSi2 nucleation temperature and the extent of layer inversion have been analyzed. The nucleation of NiSi2 was hindered on the narrow poly-Si lines as compared to that on the large area poly-Si pads at 750°C. Stress is believed to play an important role in the delayed nucleation of NiSi2 . In addition, layer inversion was found to be less severe on the narrow poly-Si lines as compared to that on the poly-Si pads after being subjected to the same annealing condition. This is likely due to the limiting grain growth of the poly-Si in the narrow lines. Enhanced stability of Ni(Pt)Si was achieved up to 800°C on both poly-Si wide pads and narrow lines.
dc.format.extent 5 p.
dc.language.iso en
dc.relation.ispartofseries Journal of the electrochemical society
dc.rights © 2002 The Electrochemical Society. This paper was published in Journal of The Electrochemical Society and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: http://dx.doi.org/10.1149/1.1473192. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Materials.
dc.title Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines.
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1149/1.1473192
dc.description.version Published version

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