mirage

Ge nanocrystals in lanthanide-based Lu2O3 high-k dielectric for nonvolatile memory applications.

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Ge nanocrystals in lanthanide-based Lu2O3 high-k dielectric for nonvolatile memory applications.

Show full item record

Title: Ge nanocrystals in lanthanide-based Lu2O3 high-k dielectric for nonvolatile memory applications.
Author: Chan, Mei Yin.; Lee, Pooi See.; Ho, V.; Seng, H. L.
Copyright year: 2007
Abstract: Ge nanocrystals embedded in lanthanide-based high-k dielectric (amorphous Lu2O3 in this work) were formed using pulsed laser deposition followed by rapid thermal annealing in N2 ambient. The formation and evolution of the Ge nanocrystals have been studied using transmission electron microscopy (TEM), x-ray photoelectron spectroscopy (XPS) in conjunction with depth profiling, and secondary ion mass spectroscopy (SIMS) analysis. Plan-view TEM images indicated that the formation of nanocrystals was first initiated during the deposition process. The annealing treatment significantly enhanced the nucleation of Ge nanocrystals, resulting in a high areal density of 7 x10^11 cm−2 Ge nanocrystals with a mean size of about 6 nm in diameter in the amorphous Lu2O3 matrix. XPS depth profile analysis revealed that Ge nanocrystals were predominantly formed from the precipitation of Ge nuclei from the oxide phase. A low annealing temperature of 400 °C was sufficient to dissociate the GeO2 and GeOx leading to the formation of Ge nanocrystals. An accumulation of Ge species close to the upper Ge/Lu2O3 interface was observed from XPS and SIMS depth profile analysis. Different charge storage behaviors observed from the memory capacitor devices before and after annealing could be correlated to the changes in structure and composition of the film. The memory capacitor device fabricated from the annealed sample showed efficient charge storage effect under a low operation voltage without significant initial charge decay.
Subject: DRNTU::Engineering::Materials.
Type: Journal Article
Series/ Journal Title: Journal of applied physics
School: School of Materials Science and Engineering
Rights: © 2007 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2803883. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Version: Published version

Files in this item

Files Size Format View
60. Ge nanocrystals in lanthanide based Lu2O3.pdf 444.9Kb PDF View/Open
   

DOI Query

- Get published version (via Digital Object Identifier)
   

This item appears in the following Collection(s)

Show full item record

Statistics

Total views

All Items Views
Ge nanocrystals in lanthanide-based Lu2O3 high-k dielectric for nonvolatile memory applications. 219

Total downloads

All Bitstreams Views
60. Ge nanocrystals in lanthanide based Lu2O3.pdf 99

Top country downloads

Country Code Views
United States of America 41
China 22
Singapore 7
France 4
Russian Federation 4

Top city downloads

city Views
Mountain View 29
Singapore 7
Redwood City 5
Clarks Summit 4
Taipei 2

Downloads / month

  2014-02 2014-03 2014-04 total
60. Ge nanocrystals in lanthanide based Lu2O3.pdf 0 0 3 3