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Wide-bandgap Zn2GeO4 nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time.

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Wide-bandgap Zn2GeO4 nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time.

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Title: Wide-bandgap Zn2GeO4 nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time.
Author: Yan, Chaoyi.; Singh, Nandan.; Lee, Pooi See.
Copyright year: 2010
Abstract: Ultraviolet (UV) photodetectors based on ternary Zn2GeO4 nanowire (NW) networks are demonstrated. The devices show fast response and recovery time, which is attributed to the unique NW-NW junction barrier dominated conductance for network devices. The UV-light induced barrier height modulation is much faster than the oxygen adsorption/desorption processes. The wide-band gap Zn2GeO4 NWs also exhibit high wavelength selectivity for deep UV detection. We demonstrate that ternary oxide NW-networks are ideal building blocks for nanoscale photodetectors with superior performance and facile fabrication processes.
Subject: DRNTU::Engineering::Materials::Nanostructured materials.
Type: Journal Article
Series/ Journal Title: Applied physics letters
School: School of Materials Science and Engineering
Rights: © 2010 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.3297905. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Version: Published version

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