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Title:
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Effect of low fluence laser annealing on ultrathin Lu2O3 high-k dielectric.
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Author:
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Darmawan, P.; Lee, Pooi See.; Setiawan, Y.; Ma, Jan.; Osipowicz, T.
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Copyright year:
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2007 |
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Abstract:
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The effect of low fluence single pulse laser annealing on a pulsed laser deposited high-k dielectric,
Lu2O3 is reported. With low fluence laser irradiation, high “k” of 45 is achieved with an equivalent
oxide thickness of 0.39 nm, without taking into account the quantum mechanical tunneling effect.
High-resolution transmission electron microscopy micrograph revealed well-ordered epitaxial-like
interfacial layer. High-resolution Rutherford backscattering confirmed the presence of Lu-based
silicate layer at the interface. It was proposed that the high dielectric constant was caused by the increased ionic polarizability in the film, thereby increasing the ionic contribution of the dielectric
constant. |
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Subject:
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DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films. |
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Type:
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Journal Article |
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Series/ Journal Title:
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Applied physics letters |
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School:
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School of Materials Science and Engineering |
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Rights:
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© 2007 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2771065. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. |
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Version:
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Published version |
