mirage

Effect of low fluence laser annealing on ultrathin Lu2O3 high-k dielectric

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Effect of low fluence laser annealing on ultrathin Lu2O3 high-k dielectric

Show simple item record

dc.contributor.author Darmawan, P.
dc.contributor.author Lee, Pooi See
dc.contributor.author Setiawan, Y.
dc.contributor.author Ma, Jan
dc.contributor.author Osipowicz, T.
dc.date.accessioned 2012-05-17T09:09:50Z
dc.date.available 2012-05-17T09:09:50Z
dc.date.copyright 2007
dc.date.issued 2012-05-17
dc.identifier.citation Darmawan, P., Lee, P. S., Setiawan, Y., Ma, J., & Osipowicz, T. (2007). Effect of low fluence laser annealing on ultrathin Lu2O3 high-k dielectric. Applied Physics Letters, 91(9).
dc.identifier.uri http://hdl.handle.net/10220/8092
dc.description.abstract The effect of low fluence single pulse laser annealing on a pulsed laser deposited high-k dielectric, Lu2O3 is reported. With low fluence laser irradiation, high “k” of 45 is achieved with an equivalent oxide thickness of 0.39 nm, without taking into account the quantum mechanical tunneling effect. High-resolution transmission electron microscopy micrograph revealed well-ordered epitaxial-like interfacial layer. High-resolution Rutherford backscattering confirmed the presence of Lu-based silicate layer at the interface. It was proposed that the high dielectric constant was caused by the increased ionic polarizability in the film, thereby increasing the ionic contribution of the dielectric constant.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights © 2007 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2771065. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films.
dc.title Effect of low fluence laser annealing on ultrathin Lu2O3 high-k dielectric
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2771065
dc.description.version Published version

Files in this item

Files Size Format View
61. Effect of l ... ing on ultrathin Lu2O3.pdf 287.6Kb PDF View/Open

This item appears in the following Collection(s)

Show simple item record

Statistics

Total views

All Items Views
Effect of low fluence laser annealing on ultrathin Lu2O3 high-k dielectric 235

Total downloads

All Bitstreams Views
61. Effect of low fluence laser annealing on ultrathin Lu2O3.pdf 80

Top country downloads

Country Code Views
United States of America 36
China 16
Singapore 8
Russian Federation 5
Unknown Country 4

Top city downloads

city Views
Mountain View 24
Singapore 8
Hefei 4
Abbotsford 2
Seoul 2

Downloads / month

  2014-06 2014-07 2014-08 total
61. Effect of low fluence laser annealing on ultrathin Lu2O3.pdf 0 0 2 2