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Silicide formation from laser thermal processing of Ti/Co bilayers

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Silicide formation from laser thermal processing of Ti/Co bilayers

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dc.contributor.author Chow, F. L.
dc.contributor.author Pey, Kin Leong
dc.contributor.author Lee, Pooi See
dc.contributor.author Tung, Chih Hang
dc.contributor.author Wang, X. C.
dc.contributor.author Lim, G. C.
dc.contributor.author Chong, Y. F.
dc.date.accessioned 2012-05-18T07:00:45Z
dc.date.available 2012-05-18T07:00:45Z
dc.date.copyright 2004
dc.date.issued 2012-05-18
dc.identifier.citation Chow, F. L., Pey, K. L., Lee, P. S., Tung, C. H., Wang, X. C., Lim, G. C., et al. (2004). Silicide formation from laser thermal processing of Ti/Co bilayers. Electrochemical and Solid-State Letters, 7(10), G213-G215.
dc.identifier.uri http://hdl.handle.net/10220/8094
dc.description.abstract A bilayered CoTi silicide structure consisting of an amorphous CoTi silicide and a highly textured CoTi silicide was found after pulsed excimer laser annealing of titanium/cobalt/silicon stack at high fluence of 0.6 J/cm2. The highly textured CoTi silicide is monocrystalline and fully coherent with the Si(111) plane of the substrate but has a large amount of microstructural defects. The constitutional supercooling phenomenon is the solidification mechanism responsible for the highly textured CoTi silicide. The incomplete crystallization shown by the presence of the amorphous CoTi silicide is attributed to a high concentration of titanium impurity.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Electrochemical and solid-state letters
dc.rights © 2004 The Electrochemical Society. This paper was published in Electrochemical and Solid-State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: http://dx.doi.org/10.1149/1.1788612. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Materials::Microelectronics and semiconductor materials.
dc.title Silicide formation from laser thermal processing of Ti/Co bilayers
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1149/1.1788612
dc.description.version Published version

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