| dc.contributor.author |
Yuan, C. L. |
| dc.contributor.author |
Darmawan, P. |
| dc.contributor.author |
Setiawan, Y. |
| dc.contributor.author |
Lee, Pooi See. |
| dc.date.accessioned |
2012-05-18T07:18:06Z |
| dc.date.available |
2012-05-18T07:18:06Z |
| dc.date.copyright |
2006 |
| dc.date.issued |
2012-05-18 |
| dc.identifier.citation |
Yuan, C. L., Darmawan, P., Setiawan, Y., & Lee, P. S. (2006). LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application. Electrochemical and Solid-State Letters, 9(6), F53-F55. |
| dc.identifier.uri |
http://hdl.handle.net/10220/8096 |
| dc.description.abstract |
A novel method to fabricate the memory structure of LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k dielectric by the pulsed laser deposition method using a rotating target was successfully developed. The average mean size and aerial density of the LaAlO3 nanocrystals are estimated to be about 6 nm and 1.1 x 10^12 cm−2, respectively. Superior performances in terms of a large
memory window, long data retention, and robust endurance were observed. |
| dc.format.extent |
3 p. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
Electrochemical and solid-state letters |
| dc.rights |
© 2006 The Electrochemical Society. This paper was published in Electrochemical and Solid-State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: http://dx.doi.org/10.1149/1.2193069. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. |
| dc.subject |
DRNTU::Engineering::Materials::Nanostructured materials. |
| dc.title |
LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application. |
| dc.type |
Journal Article |
| dc.contributor.school |
School of Materials Science and Engineering |
| dc.identifier.doi |
http://dx.doi.org/10.1149/1.2193069 |
| dc.description.version |
Published version |
