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Laser-induced Ni(Pt) germanosilicide formation through a self-limiting melting phenomenon on Si1-xGex/Si heterostructure

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Laser-induced Ni(Pt) germanosilicide formation through a self-limiting melting phenomenon on Si1-xGex/Si heterostructure

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dc.contributor.author Setiawan, Y.
dc.contributor.author Lee, Pooi See
dc.contributor.author Pey, Kin Leong
dc.contributor.author Wang, X. C.
dc.contributor.author Lim, G. C.
dc.contributor.author Tan, B. L.
dc.date.accessioned 2012-05-18T07:45:23Z
dc.date.available 2012-05-18T07:45:23Z
dc.date.copyright 2007
dc.date.issued 2012-05-18
dc.identifier.citation Setiawan, Y., Lee, P. S., Pey, K. L., Wang, X. C., Lim, G. C., & Tan, B. L. (2007). Laser-induced Ni(Pt) germanosilicide formation through a self-limiting melting phenomenon on Si1-xGex/Si heterostructure. Applied Physics Letters, 90(7).
dc.identifier.uri http://hdl.handle.net/10220/8101
dc.description.abstract Laser-induced Ni(Pt) germanosilicide formation on Si1−xGex /Si substrate has resulted in the formation of smooth Ni(Pt) germanosilicide/Si interface with minimum interface roughness which is preferred as a contact material. A confined (self-limiting) melting phenomenon occurred during the laser-induced silicidation process at laser fluence of 0.4 J cm−2 (just at the melting threshold of the sample). This phenomenon is caused by significant differences in material properties of Si1−xGex alloy and Si substrates. Formation of highly textured [Ni1−v(Pt)v](Si1−yGey) phase was detected in the sample after 20-pulsed laser thermal annealing at 0.4 J cm−2. The formation mechanism of the Ni(Pt) monogermanosilicide is discussed.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights © 2007 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2560935. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Materials::Microelectronics and semiconductor materials.
dc.title Laser-induced Ni(Pt) germanosilicide formation through a self-limiting melting phenomenon on Si1-xGex/Si heterostructure
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2560935
dc.description.version Published version

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