| dc.contributor.author |
Setiawan, Y. |
| dc.contributor.author |
Lee, Pooi See. |
| dc.contributor.author |
Pey, Kin Leong. |
| dc.contributor.author |
Wang, X. C. |
| dc.contributor.author |
Lim, G. C. |
| dc.contributor.author |
Tan, B. L. |
| dc.date.accessioned |
2012-05-18T07:45:23Z |
| dc.date.available |
2012-05-18T07:45:23Z |
| dc.date.copyright |
2007 |
| dc.date.issued |
2012-05-18 |
| dc.identifier.citation |
Setiawan, Y., Lee, P. S., Pey, K. L., Wang, X. C., Lim, G. C., & Tan, B. L. (2007). Laser-induced Ni(Pt) germanosilicide formation through a self-limiting melting phenomenon on Si1-xGex/Si heterostructure. Applied Physics Letters, 90(7). |
| dc.identifier.uri |
http://hdl.handle.net/10220/8101 |
| dc.description.abstract |
Laser-induced Ni(Pt) germanosilicide formation on Si1−xGex /Si substrate has resulted in the
formation of smooth Ni(Pt) germanosilicide/Si interface with minimum interface roughness which
is preferred as a contact material. A confined (self-limiting) melting phenomenon occurred during the laser-induced silicidation process at laser fluence of 0.4 J cm−2 (just at the melting threshold of
the sample). This phenomenon is caused by significant differences in material properties of Si1−xGex
alloy and Si substrates. Formation of highly textured [Ni1−v(Pt)v](Si1−yGey) phase was detected in
the sample after 20-pulsed laser thermal annealing at 0.4 J cm−2. The formation mechanism of the
Ni(Pt) monogermanosilicide is discussed. |
| dc.format.extent |
3 p. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
Applied physics letters |
| dc.rights |
© 2007 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2560935. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. |
| dc.subject |
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials. |
| dc.title |
Laser-induced Ni(Pt) germanosilicide formation through a self-limiting melting phenomenon on Si1-xGex/Si heterostructure. |
| dc.type |
Journal Article |
| dc.contributor.school |
School of Materials Science and Engineering |
| dc.identifier.doi |
http://dx.doi.org/10.1063/1.2560935 |
| dc.description.version |
Published version |
