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On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

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On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

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dc.contributor.author Ju, Zhengang
dc.contributor.author Tan, Swee Tiam
dc.contributor.author Zhang, Zi-Hui
dc.contributor.author Ji, Y.
dc.contributor.author Kyaw, Z.
dc.contributor.author Dikme, Y.
dc.contributor.author Sun, Xiaowei
dc.contributor.author Demir, Hilmi Volkan
dc.date.accessioned 2012-05-23T02:33:58Z
dc.date.available 2012-05-23T02:33:58Z
dc.date.copyright 2012
dc.date.issued 2012-05-23
dc.identifier.citation Ju, Z., Tan, S. T., Zhang, Z.-H., Ji, Y., Kyaw, Z., Dikme, Y., et al. (2012). On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer. Applied physics letters, 100.
dc.identifier.uri http://hdl.handle.net/10220/8126
dc.description.abstract A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth temperature on the emission wavelength was probed and studied by optical, structural, and electrical properties. Numerical studies on the effect of indium composition and quantum confinement Stark effect were also carried out to verify the experimental data. The results suggest that the redshift of the peak emission wavelength is originated from the enhanced indium incorporation, which results from the reduced strain during the growth of quantum wells.
dc.format.extent 5 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights © 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3694054].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Electrical and electronic engineering.
dc.title On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.3694054
dc.description.version Published version

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