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Study of the evolution of Cu-Cu bonding interface imperfection under direct current stressing for three dimensional integrated circuits

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Study of the evolution of Cu-Cu bonding interface imperfection under direct current stressing for three dimensional integrated circuits

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Title: Study of the evolution of Cu-Cu bonding interface imperfection under direct current stressing for three dimensional integrated circuits
Author: Made, Riko I.; Lan, Peng; Li, Hong Yu; Gan, Chee Lip; Tan, Chuan Seng
Copyright year: 2011
Abstract: While the ultimate goal of Cu interconnection in 3D-IC is to have Cu as both the glue layer and interconnection line, there has been numerous demonstration of Cu-Cu bonding that shows the bonding interface is not always perfect. This work investigates the evolution of Cu-Cu bond interface under prolonged current stress by combining electrical current stressing and bond interface cross-sectional analysis. Voids at the bond interface were observed to be driven by electromigration to the adjoining interconnect line, leading to early failures of the line. This may have significant impact on the future of 3D-IC technology that utilizes Cu-Cu bonding, and it may be mitigated by inserting a barrier layer in between the bond interface and the interconnect line.
Subject: DRNTU::Engineering::Materials::Metallic materials.
Type: Conference Paper
Conference name: Materials for Advanced Metallization Conference (2011 : Dresden, Germany)
School: School of Materials Science and Engineering
Rights: © 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [DOI: http://dx.doi.org/10.1109/IITC.2011.5940302 ]

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