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Study of the evolution of Cu-Cu bonding interface imperfection under direct current stressing for three dimensional integrated circuits.

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Study of the evolution of Cu-Cu bonding interface imperfection under direct current stressing for three dimensional integrated circuits.

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dc.contributor.author Made, Riko I.
dc.contributor.author Lan, Peng.
dc.contributor.author Li, Hong Yu.
dc.contributor.author Gan, Chee Lip.
dc.contributor.author Tan, Chuan Seng.
dc.date.accessioned 2012-05-31T07:43:38Z
dc.date.available 2012-05-31T07:43:38Z
dc.date.copyright 2011
dc.date.issued 2012-05-31
dc.identifier.citation Made, R. I., Lan, P., Li, H. Y., Gan, C. L., & Tan, C. S. (2011). Study of the evolution of Cu-Cu bonding interface imperfection under direct current stressing for three dimensional integrated circuits. In Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International, pp.1-3.
dc.identifier.uri http://hdl.handle.net/10220/8182
dc.description.abstract While the ultimate goal of Cu interconnection in 3D-IC is to have Cu as both the glue layer and interconnection line, there has been numerous demonstration of Cu-Cu bonding that shows the bonding interface is not always perfect. This work investigates the evolution of Cu-Cu bond interface under prolonged current stress by combining electrical current stressing and bond interface cross-sectional analysis. Voids at the bond interface were observed to be driven by electromigration to the adjoining interconnect line, leading to early failures of the line. This may have significant impact on the future of 3D-IC technology that utilizes Cu-Cu bonding, and it may be mitigated by inserting a barrier layer in between the bond interface and the interconnect line.
dc.language.iso en
dc.rights © 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [DOI: http://dx.doi.org/10.1109/IITC.2011.5940302 ]
dc.subject DRNTU::Engineering::Materials::Metallic materials.
dc.title Study of the evolution of Cu-Cu bonding interface imperfection under direct current stressing for three dimensional integrated circuits.
dc.type Conference Paper
dc.contributor.conference Materials for Advanced Metallization Conference (2011 : Dresden, Germany)
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1109/IITC.2011.5940302

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