|
Title:
|
Formation and characterization of magnetron sputtered Ta–Si–N–O thin films.
|
|
Author:
|
Yan, H.; Li, L.; Ho, F. Y.; Liang, M. H.; Pan, J. S.; Xu, S.; Chen, Z.
|
|
Copyright year:
|
2009 |
|
Abstract:
|
Tantalum silicon nitride films have good potential to be used as hard coatings and diffusion barriers. In this
work, films with different composition were deposited using a magnetron sputter under varying nitrogen
flow rates. The composition, microstructure, thermal stability and electrical resistivity have been
investigated. In the as-deposited state, all films consist of amorphous TaSixOy, TaxOy, TaxNy and TaSix
compounds. The composition of films is affected by N2 flow rate. The resistivity of the as-deposited films
increases with N concentrations. At elevated temperatures, all films show good thermal stability to at least
800 °C, while film with high Si concentration is largely amorphous at 900 °C because of highly stable TaSixOy
compounds. This study suggests that the TaSixOy compounds could be the key factor in enhancing thermal
stability of Ta–Si–N–O films. |
|
Subject:
|
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films. |
|
Type:
|
Journal Article |
|
Series/ Journal Title:
|
Thin solid films |
|
School:
|
School of Materials Science and Engineering |
|
Rights:
|
© 2009 Elsevier.
This is the author created version of a work that has been peer reviewed and accepted for publication by Thin Solid Films, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.tsf.2009.03.057]. |
|
Version:
|
Accepted version |
