mirage

Barrier property of TiSiN films formed by low frequency, high density inductively coupled plasma process

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Barrier property of TiSiN films formed by low frequency, high density inductively coupled plasma process

Show simple item record

dc.contributor.author Ee, Elden Yong Chiang
dc.contributor.author Chen, Z.
dc.contributor.author Wang, W. D.
dc.contributor.author Chi, Dong Zhi
dc.contributor.author Xu, S.
dc.contributor.author Law, S. B.
dc.date.accessioned 2012-06-19T07:50:39Z
dc.date.available 2012-06-19T07:50:39Z
dc.date.copyright 2004
dc.date.issued 2012-06-19
dc.identifier.citation Ee, E. Y. C., Chen, Z., Wang, W. D., Chi, D. Z., Xu, S., & Law, S. B. (2005). Barrier property of TiSiN films formed by low frequency, high density inductively coupled plasma process. Surface & coatings technology, 198(1-3), 291-295.
dc.identifier.uri http://hdl.handle.net/10220/8206
dc.description.abstract A ternary barrier film TiSiN was prepared by low frequency, high density inductively coupled plasma (ICP) implantation of N into TiSi substrate. This leads to the formation of Ti–N and Si–N compounds in the ternary film. Using this technique, 5–20-nm-thick TiSiN films were successfully grown over different deposition conditions including external bias, argon gas flow rate and nitrogen plasma treatment time. Barrier film structure was characterized by X-ray diffraction (XRD). For compositional analysis, X-ray photoelectron spectroscopy was used. The diffusion study was carried out by depth profiling of Cu using time-of-flight secondary ion mass spectrometer (ToF-SIMS) after annealing treatment at various temperatures. Discussion on the relationship between the barrier performance and the film structures is made in an attempt to elucidate the controlling factor for Cu diffusion in such a mixed microstructure. The implication to process conditions is also discussed.
dc.format.extent 13 p.
dc.language.iso en
dc.relation.ispartofseries Surface and coatings technology
dc.rights © 2004 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Surface and Coatings Technology, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.surfcoat.2004.10.105 ].
dc.subject DRNTU::Engineering::Materials::Plasma treatment
dc.title Barrier property of TiSiN films formed by low frequency, high density inductively coupled plasma process
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1016/j.surfcoat.2004.10.105
dc.description.version Accepted version

Files in this item

Files Size Format View
31. Barrier pro ... gh density ICP process.pdf 296.0Kb PDF View/Open

This item appears in the following Collection(s)

Show simple item record

Statistics

Total views

All Items Views
Barrier property of TiSiN films formed by low frequency, high density inductively coupled plasma process 253

Total downloads

All Bitstreams Views
31. Barrier property of TiSiN films formed by low frequency high density ICP process.pdf 142

Top country downloads

Country Code Views
United States of America 73
China 12
Singapore 12
Russian Federation 7
Korea 6

Top city downloads

city Views
Mountain View 51
Singapore 12
Seoul 3
Beijing 2
Exton 2