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Effect of processing parameters on electroless Cu seed layer properties

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Effect of processing parameters on electroless Cu seed layer properties

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dc.contributor.author Ee, Elden Yong Chiang
dc.contributor.author Chen, Z.
dc.contributor.author Chan, L.
dc.contributor.author See, Alex K. H.
dc.contributor.author Law, S. B.
dc.contributor.author Tee, K. C.
dc.contributor.author Zeng, K. Y.
dc.contributor.author Shen, L.
dc.date.accessioned 2012-06-20T02:56:04Z
dc.date.available 2012-06-20T02:56:04Z
dc.date.copyright 2004
dc.date.issued 2012-06-20
dc.identifier.citation Ee, E. Y. C., Chen, Z., Chan, L., See, Alex K. H., Law, S. B., Tee, K. C., et al. (2004). Effect of processing parameters on electroless Cu seed layer properties. Thin solid films, 462-463, 197-201.
dc.identifier.uri http://hdl.handle.net/10220/8212
dc.description.abstract Electroless Cu seed layer is essential for subsequent copper metallization by electroplating for sub-micron wafer technology. This layer is required to provide good step coverage and high uniformity. In the current work, electroless copper was deposited on a TiN surface activated by palladium. The effect of deposition time on the properties of electroless Cu films was reported. It shows that as the deposition time increases, the surface coverage of Cu film on activated TiN is improved and there is a significant reduction in sheet resistance and an increase in grain size of deposited copper film. Of particular interest is that there exists a preferred Cu (111) crystal orientation in the samples subjected to more than as short as 3 min of deposition. A surface roughness (Rrms) of ∼17 nm has been achieved. The results obtained in current study points out a promising process for laying down thin Cu seed layer.
dc.language.iso en
dc.relation.ispartofseries Thin solid films
dc.rights © 2004 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Thin Solid Films, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.tsf.2004.05.018].
dc.subject DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
dc.title Effect of processing parameters on electroless Cu seed layer properties
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1016/j.tsf.2004.05.018
dc.description.version Accepted version

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