Controlled synthesis of CdE (E=S, Se and Te) nanowires

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Controlled synthesis of CdE (E=S, Se and Te) nanowires

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Title: Controlled synthesis of CdE (E=S, Se and Te) nanowires
Author: Xi, Lifei; Chua, Kheng Hwee; Zhao, Yanyuan; Zhang, Jun; Xiong, Qihua; Lam, Yeng Ming
Copyright year: 2012
Abstract: This work focused on a catalyst-free solution-based method to synthesize single-crystal CdE (E = S, Se and Te) nanowires. Using the hot coordinating solvents method, we have successfully synthesized high aspect ratio CdE nanowires. In this paper, we present our very recent results on the synthesis of CdTe nanowires and summarize our understanding of the effect of reaction parameters on the growth of CdE nanowires. The reaction parameters include ligands for Cd-complexes and E-complexes, ligand-to-Cd mole ratio, Cd-to-E mole ratio, precursor concentration, reaction temperature and the injection process. We propose the optimum conditions for the growth of CdE nanocrystals with a large aspect ratio. Possible growth mechanisms were also investigated using time-dependent studies. Furthermore, a Raman study shows a higher concentration of tellurium on the surface of CdTe nanowires. This is understandable because the free energy of Te is smaller than that of CdTe and thus Te crystals can easily form during the synthesis. Our high aspect-ratio nanowires have good dispersibility and exhibit huge potential applications in areas such as solution processed photovoltaic cells and transistors.
Subject: DRNTU::Engineering::Materials.
Type: Journal Article
Series/ Journal Title: RSC advances
School: School of Materials Science and Engineering
Rights: © 2012 Royal Society of Chemistry. This is the author created version of a work that has been peer reviewed and accepted for publication by RSC Advances, Royal Society of Chemistry. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [DOI: http://dx.doi.org/10.1039/C2RA20060K ]
Version: Accepted version

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