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Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si

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Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si

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Title: Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si
Author: Tan, Eu Jin; Pey, Kin Leong; Chi, Dong Zhi; Lee, Pooi See; Tang, L. J.
Copyright year: 2006
Abstract: Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height ϕ_Beff and ideality factor due to the presence of silicide-induced microstructural defects which are likely sources of trap states. A method to improve the ϕ_Beff and of the diodes utilizing in situ Ar plasma cleaning to induce a light amorphization of the Si(001) substrate is proposed. Even though the diodes formed in this way are less textured and have a poorer interface, they are free of silicide-induced microstructural defects, leading to an overall improvement in current transport and conduction properties which can be modeled using inhomogenous Schottky contact model.
Subject: DRNTU::Engineering::Materials
Type: Journal Article
Series/ Journal Title: IEEE electron device letters
School: School of Materials Science and Engineering
Rights: © 2006 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/LED.2005.863142.
Version: Accepted version

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