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Title:
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Multiple-pulse laser thermal annealing for the formation of Co-silicided junction.
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Author:
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Lee, Pooi See.; Pey, Kin Leong.; Chow, F. L.; Tang, L. J.; Tung, Chih Hang.; Wang, X. C.; Lim, G. C.
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Copyright year:
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2006 |
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Abstract:
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Formation of Co-silicide contact layers on narrow
silicon regions using multiple-pulse excimer laser annealing is
demonstrated. Excellent performance of junction leakage behavior
can be attained on narrow-width n+/p and p+/n junction
as compared with standard rapid thermal annealed samples.
Liquid-phase epitaxial Co-silicide regrowth has been found to
occur and create a smooth and abrupt silicide/Si interface with
high junction integrity using multiple-pulse laser annealing. Heat confinement created by the shallow trench isolation surrounding
the narrow-width n+/p and p+/n junctions has minimized rapid
quenching that might result in an amorphous structure. This has
facilitated the crystallization of Co-silicide with multiple-pulse
laser annealing. |
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Subject:
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DRNTU::Engineering::Materials. |
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Type:
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Journal Article |
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Series/ Journal Title:
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IEEE electron device letters |
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School:
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School of Materials Science and Engineering |
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Rights:
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© 2006 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/LED.2006.871536. |
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Version:
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Accepted version |
