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New salicidation technology with Ni(Pt) alloy for MOSFETs

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New salicidation technology with Ni(Pt) alloy for MOSFETs

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Title: New salicidation technology with Ni(Pt) alloy for MOSFETs
Author: Lee, Pooi See; Pey, Kin Leong; Mangelinck, D.; Ding, Jun; Chi, Dong Zhi; Chan, L.
Copyright year: 2001
Abstract: A novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the low thermal budget (<700 °C) of the conventional Ni salicidation by forming Ni(Pt)Si. The addition of Pt has enhanced the thermal stability of NiSi. Improved sheet resistance of the salicided narrow poly-Si and active lines was achieved up to 750 °C and 700 °C for as-deposited Ni(Pt) thickness of 30 nm and 15 nm, respectively. This successfully extends the rapid thermal processing (RTP) windowby delaying the nucleation of NiSi2 and agglomeration. Implementation of Ni(Pt) alloyed silicidation was demonstrated on PMOSFETs with high drive current and low junction leakage.
Subject: DRNTU::Engineering::Materials
Type: Journal Article
Series/ Journal Title: IEEE electron device letters
School: School of Materials Science and Engineering
Rights: © 2001 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/55.974579.
Version: Accepted version

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