| dc.contributor.author |
Lee, Pooi See. |
| dc.contributor.author |
Pey, Kin Leong. |
| dc.contributor.author |
Mangelinck, D. |
| dc.contributor.author |
Ding, J. |
| dc.contributor.author |
Chi, Dong Zhi. |
| dc.contributor.author |
Chan, L. |
| dc.date.accessioned |
2012-07-26T01:48:56Z |
| dc.date.available |
2012-07-26T01:48:56Z |
| dc.date.copyright |
2001 |
| dc.date.issued |
2012-07-26 |
| dc.identifier.citation |
Lee, P. S., Pey, K. L., Mangelick, D., Ding, J., Chi, D. Z., & Chan, L. (2001). New Salicidation Technology with Ni(Pt) Alloy for MOSFETs. IEEE Electron Device Letters, 22(12), 568-570. |
| dc.identifier.uri |
http://hdl.handle.net/10220/8340 |
| dc.description.abstract |
A novel salicide technology to improve the thermal
stability of the conventional Ni silicide has been developed by employing
Ni(Pt) alloy salicidation. This technique provides an effective
avenue to overcome the low thermal budget (<700 °C) of
the conventional Ni salicidation by forming Ni(Pt)Si. The addition
of Pt has enhanced the thermal stability of NiSi. Improved
sheet resistance of the salicided narrow poly-Si and active lines was
achieved up to 750 °C and 700 °C for as-deposited Ni(Pt) thickness
of 30 nm and 15 nm, respectively. This successfully extends the
rapid thermal processing (RTP) windowby delaying the nucleation
of NiSi2 and agglomeration. Implementation of Ni(Pt) alloyed silicidation
was demonstrated on PMOSFETs with high drive current
and low junction leakage. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
IEEE electron device letters |
| dc.rights |
© 2001 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/55.974579. |
| dc.subject |
DRNTU::Engineering::Materials. |
| dc.title |
New salicidation technology with Ni(Pt) alloy for MOSFETs. |
| dc.type |
Journal Article |
| dc.contributor.school |
School of Materials Science and Engineering |
| dc.identifier.doi |
http://dx.doi.org/10.1109/55.974579 |
| dc.description.version |
Accepted version |
