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Improved NiSi salicide process using presilicide N2+ implant for MOSFETs.

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Improved NiSi salicide process using presilicide N2+ implant for MOSFETs.

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Title: Improved NiSi salicide process using presilicide N2+ implant for MOSFETs.
Author: Lee, Pooi See.; Pey, Kin Leong.; Mangelinck, D.; Ding, Jun.; Wee, A. T. S.; Chan, L.
Copyright year: 2000
Abstract: An improved Ni salicide process has been developed by incorporating nitrogen (N+ 2 ) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate and active regions of different linewidths show improved thermal stability with low sheet resistance up to a salicidation temperature of 700 and 750 °C, respectively. Nitrogen was found to be confined within the NiSi layer and reduced agglomeration of the silicide. Phase transformation to the undesirable high resistivity NiSi2 phase was delayed, likely due to a change in the interfacial energy. The electrical results of N+2 implanted Ni-salicided PMOSFETs show higher drive current and lower junction leakage as compared to devices with no N+2 implant.
Subject: DRNTU::Engineering::Materials.
Type: Journal Article
Series/ Journal Title: IEEE electron device letters
School: School of Materials Science and Engineering
Rights: © 2000 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/55.887467.
Version: Accepted version

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