| dc.contributor.author |
Lee, Pooi See. |
| dc.contributor.author |
Pey, Kin Leong. |
| dc.contributor.author |
Mangelinck, D. |
| dc.contributor.author |
Ding, J. |
| dc.contributor.author |
Wee, A. T. S. |
| dc.contributor.author |
Chan, L. |
| dc.date.accessioned |
2012-07-26T02:43:18Z |
| dc.date.available |
2012-07-26T02:43:18Z |
| dc.date.copyright |
2000 |
| dc.date.issued |
2012-07-26 |
| dc.identifier.citation |
Lee, P. S., Pey, K. L., Mangelinck, D., Ding, J., Wee, T. S., & Chan, L. (2000). Improved NiSi Salicide Process using Presilicide N2+ Implant for MOSFETs. IEEE Electron Device Letters, 21(12), 566-568. |
| dc.identifier.uri |
http://hdl.handle.net/10220/8341 |
| dc.description.abstract |
An improved Ni salicide process has been developed
by incorporating nitrogen (N+
2 ) implant prior to Ni deposition
to widen the salicide processing temperature window. Salicided
poly-Si gate and active regions of different linewidths show
improved thermal stability with low sheet resistance up to a salicidation
temperature of 700 and 750 °C, respectively. Nitrogen was
found to be confined within the NiSi layer and reduced agglomeration
of the silicide. Phase transformation to the undesirable
high resistivity NiSi2 phase was delayed, likely due to a change
in the interfacial energy. The electrical results of N+2 implanted
Ni-salicided PMOSFETs show higher drive current and lower
junction leakage as compared to devices with no N+2 implant. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
IEEE electron device letters |
| dc.rights |
© 2000 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/55.887467. |
| dc.subject |
DRNTU::Engineering::Materials. |
| dc.title |
Improved NiSi salicide process using presilicide N2+ implant for MOSFETs. |
| dc.type |
Journal Article |
| dc.contributor.school |
School of Materials Science and Engineering |
| dc.identifier.doi |
http://dx.doi.org/10.1109/55.887467 |
| dc.description.version |
Accepted version |
