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Improved NiSi salicide process using presilicide N2+ implant for MOSFETs

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Improved NiSi salicide process using presilicide N2+ implant for MOSFETs

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dc.contributor.author Lee, Pooi See
dc.contributor.author Pey, Kin Leong
dc.contributor.author Mangelinck, D.
dc.contributor.author Ding, Jun
dc.contributor.author Wee, A. T. S.
dc.contributor.author Chan, L.
dc.date.accessioned 2012-07-26T02:43:18Z
dc.date.available 2012-07-26T02:43:18Z
dc.date.copyright 2000
dc.date.issued 2012-07-26
dc.identifier.citation Lee, P. S., Pey, K. L., Mangelinck, D., Ding, J., Wee, T. S., & Chan, L. (2000). Improved NiSi Salicide Process using Presilicide N2+ Implant for MOSFETs. IEEE Electron Device Letters, 21(12), 566-568.
dc.identifier.uri http://hdl.handle.net/10220/8341
dc.description.abstract An improved Ni salicide process has been developed by incorporating nitrogen (N+ 2 ) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate and active regions of different linewidths show improved thermal stability with low sheet resistance up to a salicidation temperature of 700 and 750 °C, respectively. Nitrogen was found to be confined within the NiSi layer and reduced agglomeration of the silicide. Phase transformation to the undesirable high resistivity NiSi2 phase was delayed, likely due to a change in the interfacial energy. The electrical results of N+2 implanted Ni-salicided PMOSFETs show higher drive current and lower junction leakage as compared to devices with no N+2 implant.
dc.language.iso en
dc.relation.ispartofseries IEEE electron device letters
dc.rights © 2000 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/55.887467.
dc.subject DRNTU::Engineering::Materials
dc.title Improved NiSi salicide process using presilicide N2+ implant for MOSFETs
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1109/55.887467
dc.description.version Accepted version

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