mirage

Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel

Show full item record

Title: Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel
Author: Tan, Eu Jin; Pey, Kin Leong; Singh, Navab; Lo, Guo-Qiang; Chi, Dong Zhi; Chin, Yoke King; Hoe, Keat Mun; Cui, Guangda; Lee, Pooi See
Copyright year: 2008
Abstract: We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi2−x) in a Schottky source/drain back-gated architecture. Although the subthreshold swing (~180 mV/dec) and drain-induced barrier lowering (~500 mV/V) are high due thick BOX as gate oxide, the fabricated Schottky transistors show acceptable drive current ~900 μA/μm and high Ion/Ioff ratio (~105). This is attributed to the improved carrier injection as a result of low Schottky barrier height (Φb) of ErSi2−x/n − Si(~0.3 eV) and the nanometer-sized (~8 nm) Schottky junction. The carrier transport is found to be dominated by the metal–semiconductor interface instead of the channel body speculated from the channel length independent behavior of the devices. Furthermore, the transistors exhibit ambipolar characteristics, which are modeled using thermionic/ thermionic-field emission for positive and thermionic-field emission for negative gate biases.
Subject: DRNTU::Engineering::Materials
Type: Journal Article
Series/ Journal Title: IEEE electron device letters
School: School of Materials Science and Engineering
Rights: © 2008 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/LED.2008.2004508.
Version: Accepted version

Files in this item

Files Size Format View
43. Demonstrati ... rbium silicided source.pdf 419.3Kb PDF View/Open
   

DOI Query

- Get published version (via Digital Object Identifier)
   

This item appears in the following Collection(s)

Show full item record

Statistics

Total views

All Items Views
Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel 367

Total downloads

All Bitstreams Views
43. Demonstration of Schottky barrier NMOS transistors with erbium silicided source.pdf 249
43. Demonstration of Schottky barrier NMOS transistors with erbium silicided source drain and silicon nanowire channel.pdf 4

Top country downloads

Country Code Views
United States of America 91
China 56
Singapore 33
India 9
Russian Federation 5

Top city downloads

city Views
Mountain View 73
Singapore 26
Baoding 15
Beijing 5
Tripoli 4

Downloads / month

  2014-10 2014-11 2014-12 total
43. Demonstration of Schottky barrier NMOS transistors with erbium silicided source.pdf 0 0 6 6