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https://hdl.handle.net/10356/94647
Title: | Enhanced ferroelectric switching characteristics of P(VDF-TrFE) for organic memory devices | Authors: | Kusuma, Damar Yoga Nguyen, Chien A. Lee, Pooi See |
Keywords: | DRNTU::Engineering::Materials | Issue Date: | 2010 | Source: | Kusuma, D. Y., Nguyen, C. A., & Lee, P. S. (2010). Enhanced ferroelectric switching characteristics of P(VDF-TrFE) for organic memory devices. The Journal of Physical Chemistry B, 114(42), 13289-13293. | Series/Report no.: | The journal of physical chemistry B | Abstract: | In the following work, we report an approach to shorten the ferroelectric switching time of P(VDF-TrFE) film by blending with as-synthesized gold nanoparticles. Ferroelectric hysteresis measurements give remnant polarization and coercive field of 8 μC/cm2 and 50 MV/m, respectively. A series of electric pulses was applied for the characterization of ferroelectric polymers, and the switching time response was evaluated. More than 3 orders of magnitude reduction in switching time is observed for the polymer film blended with nanoparticles of the amount 1 × 10−6 wt %. The observed switching enhancements are discussed in terms of improved alignment of the ferroelectric crystal plane in the presence of the gold nanoparticles, whereby the aligned crystal planes experience a stronger effective field compared to the randomly oriented planes in pristine P(VDF-TrFE). | URI: | https://hdl.handle.net/10356/94647 http://hdl.handle.net/10220/8509 |
DOI: | 10.1021/jp105249f | Schools: | School of Materials Science & Engineering | Rights: | © 2010 American Chemical Society | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | MSE Journal Articles |
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