Bismuth-catalyzed growth of germanium nanowires in vapor phase

DSpace/Manakin Repository


Search DR-NTU

Advanced Search Subject Search


My Account

Bismuth-catalyzed growth of germanium nanowires in vapor phase

Show full item record

Title: Bismuth-catalyzed growth of germanium nanowires in vapor phase
Author: Yan, Chaoyi; Lee, Pooi See
Copyright year: 2009
Abstract: We report the successful synthesis of single crystalline Ge nanowires using Bi as catalyst. To the best of our knowledge, this is the first time Bi was used in vapor phase for Ge nanowire growth. An in situ catalyst evaporation method was used to obtain the high quality Ge nanowires. Diameters of the nanowires are in the range of 10−40 nm and the growth direction is along <111>. Composition analyses showed that the nanowires were composed of Ge while the capping catalyst particles were Bi. Controlled experiments showed that source material with proper Bi/Ge molar ratio was a key aspect for the growth of high purity nanowires. The low-temperature growth of Ge nanowires, enabled by the low eutectic point of Bi/Ge, is especially desired for their potential integration with existing semiconductor technologies.
Subject: DRNTU::Engineering::Materials.
Type: Journal Article
Series/ Journal Title: The journal of physical chemistry C
School: School of Materials Science and Engineering
Rights: © 2009 American Chemical Society

Files in this item

Files Size Format View

There are no files associated with this item.


DOI Query

- Get published version (via Digital Object Identifier)

This item appears in the following Collection(s)

Show full item record