Bismuth-catalyzed growth of germanium nanowires in vapor phase

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Bismuth-catalyzed growth of germanium nanowires in vapor phase

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dc.contributor.author Yan, Chaoyi
dc.contributor.author Lee, Pooi See
dc.date.accessioned 2012-09-13T01:47:27Z
dc.date.available 2012-09-13T01:47:27Z
dc.date.copyright 2009
dc.date.issued 2012-09-13
dc.identifier.citation Yan, C., & Lee, P. S. (2009). Bismuth-catalyzed growth of germanium nanowires in vapor phase. The Journal of Physical Chemistry C, 113(6), 2208-2211.
dc.identifier.uri http://hdl.handle.net/10220/8510
dc.description.abstract We report the successful synthesis of single crystalline Ge nanowires using Bi as catalyst. To the best of our knowledge, this is the first time Bi was used in vapor phase for Ge nanowire growth. An in situ catalyst evaporation method was used to obtain the high quality Ge nanowires. Diameters of the nanowires are in the range of 10−40 nm and the growth direction is along <111>. Composition analyses showed that the nanowires were composed of Ge while the capping catalyst particles were Bi. Controlled experiments showed that source material with proper Bi/Ge molar ratio was a key aspect for the growth of high purity nanowires. The low-temperature growth of Ge nanowires, enabled by the low eutectic point of Bi/Ge, is especially desired for their potential integration with existing semiconductor technologies.
dc.language.iso en
dc.relation.ispartofseries The journal of physical chemistry C
dc.rights © 2009 American Chemical Society
dc.subject DRNTU::Engineering::Materials
dc.title Bismuth-catalyzed growth of germanium nanowires in vapor phase
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1021/jp8111414

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