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Network-enhanced photoresponse time of Ge nanowire photodetectors.

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Network-enhanced photoresponse time of Ge nanowire photodetectors.

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dc.contributor.author Yan, Chaoyi.
dc.contributor.author Singh, Nandan.
dc.contributor.author Cai, Hui.
dc.contributor.author Gan, Chee Lip.
dc.contributor.author Lee, Pooi See.
dc.date.accessioned 2012-09-13T06:40:36Z
dc.date.available 2012-09-13T06:40:36Z
dc.date.copyright 2010
dc.date.issued 2012-09-13
dc.identifier.citation Yan, C., Singh, N., Cai, H., Gan, C. L., & Lee, P. S. (2010). Network-enhanced photoresponse time of Ge nanowire photodetectors. ACS Applied Materials & Interfaces, 2(7), 1794-1797.
dc.identifier.uri http://hdl.handle.net/10220/8518
dc.description.abstract We demonstrated that the photoresponse time of Ge nanowire (NW) photodetectors could be greatly improved by using percolated NW networks (instead of single NW) as the active detection channels. Although the reset time for single-NW devices was >70 s, a fast reset time <1 s was observed for NW-network devices. The enhancement was attributed to the barrier-dominated conductance for network devices, which was not available in single-NW devices. The network structures provide ideal alternative solutions to the conventional single-NW photodetectors, given their superior performances and low-cost fabrication processes.
dc.language.iso en
dc.relation.ispartofseries ACS applied materials & interfaces
dc.rights © 2010 American Chemical Society
dc.subject DRNTU::Engineering::Materials.
dc.title Network-enhanced photoresponse time of Ge nanowire photodetectors.
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1021/am100321r

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