mirage

Thermal stability of rare-earth based ultrathin Lu2O3 for high-k dielectrics

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Thermal stability of rare-earth based ultrathin Lu2O3 for high-k dielectrics

Show full item record

Title: Thermal stability of rare-earth based ultrathin Lu2O3 for high-k dielectrics
Author: Darmawan, P.; Lee, Pooi See; Setiawan, Y.; Lai, J. C.; Yang, P.
Copyright year: 2007
Abstract: Lu2O3 thin film was deposited on n-type (100) Si substrates using pulsed laser deposition. A k value of 15.95 with an equivalent oxide thickness (EOT) of 1.10 nm and a current density of 2.6×10−5 A/cm2 at +1 V accumulation bias is achievable for the 4.5 nm thick Lu2O3 thin film deposited at room temperature after postdeposition annealing at 600 °C in oxygen ambient. Annealing a similar sample at 900 °C caused the EOT and leakage current density to increase to 1.68 nm and 1×10−4 A/cm2, respectively. High resolution transmission electron microscopy analysis has shown that Lu2O3 film remains amorphous at high temperature annealing at 900 °C. An x-ray reflectivity analysis on a separately prepared sample with lower annealing temperature (800 °C) suggested a formation of Lu-based silicate layer. It is believed that the formation of low-k silicate layer may have contributed to the observed increase in EOT and the reduction in the k value.
Subject: DRNTU::Engineering::Materials.
Type: Journal Article
Series/ Journal Title: Journal of vacuum science & technology B
School: School of Materials Science and Engineering
Rights: © 2007 American Vacuum Society. This paper was published in Journal of Vacuum Science & Technology B and is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at DOI: [http://dx.doi.org/10.1116/1.2749526]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Version: Published version

Files in this item

Files Size Format View
62. Thermal sta ... for high-k dielectrics.pdf 661.3Kb PDF View/Open
   

DOI Query

- Get published version (via Digital Object Identifier)
   

This item appears in the following Collection(s)

Show full item record

Statistics

Total views

All Items Views
Thermal stability of rare-earth based ultrathin Lu2O3 for high-k dielectrics 168

Total downloads

All Bitstreams Views
62. Thermal stability of rare-earth based ultrathin Lu2O3 for high-k dielectrics.pdf 91

Top country downloads

Country Code Views
United States of America 49
China 8
Taiwan 5
Unknown Country 4
Russian Federation 4

Top city downloads

city Views
Mountain View 39
Taichung 5
Singapore 4
Hefei 3
Beijing 2