mirage

Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.

Show full item record

Title: Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.
Author: Liu, Juqing.; Yin, Zongyou.; Cao, Xiehong.; Zhao, Fei.; Lin, Anping.; Xie, Linghai.; Fan, Qu-Li.; Boey, Yin Chiang Freddy.; Zhang, Hua.; Huang, Wei.
Copyright year: 2010
Abstract: A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current−voltage (I−V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (104−105) and low switching threshold voltage (0.5−1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.
Subject: DRNTU::Engineering::Materials.
Type: Journal Article
Series/ Journal Title: ACS nano
School: School of Materials Science and Engineering
Rights: © 2010 American Chemical Society.

Files in this item

Files Size Format View

There are no files associated with this item.

   

DOI Query

- Get published version (via Digital Object Identifier)
   

This item appears in the following Collection(s)

Show full item record