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Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.

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Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.

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dc.contributor.author Liu, Juqing.
dc.contributor.author Yin, Zongyou.
dc.contributor.author Cao, Xiehong.
dc.contributor.author Zhao, Fei.
dc.contributor.author Lin, Anping.
dc.contributor.author Xie, Linghai.
dc.contributor.author Fan, Qu-Li.
dc.contributor.author Boey, Yin Chiang Freddy.
dc.contributor.author Zhang, Hua.
dc.contributor.author Huang, Wei.
dc.date.accessioned 2012-09-19T06:22:22Z
dc.date.available 2012-09-19T06:22:22Z
dc.date.copyright 2010
dc.date.issued 2012-09-19
dc.identifier.citation Liu, J., Yin, Z., Cao, X., Zhao, F., Lin, A., Xie, L., et al. (2010). Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes. ACS Nano, 4(7), 3987-3992.
dc.identifier.issn 1936-0851
dc.identifier.uri http://hdl.handle.net/10220/8572
dc.description.abstract A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current−voltage (I−V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (104−105) and low switching threshold voltage (0.5−1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.
dc.language.iso en
dc.relation.ispartofseries ACS nano
dc.rights © 2010 American Chemical Society.
dc.subject DRNTU::Engineering::Materials.
dc.title Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1021/nn100877s

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